Theoretical study of the maximum power point of n-type and p-type crystalline silicon space solar cells

TitleTheoretical study of the maximum power point of n-type and p-type crystalline silicon space solar cells
Publication TypeJournal Article
Year of Publication2013
AuthorsCappelletti M, Casas G., Cédola A., Peltzer y Blancá E.
JournalSemiconductor Science and Technology
Volume28
Pagination045010
Date Publishedmar
Abstract

The performance of crystalline silicon n+/p/p+ and n+/n/p+ solar cells under AM0 spectrum, irradiated with 1 MeV electrons at fluences below 1017 cm−2 has been analyzed by means of computer simulation. The software used, fully developed by the authors, solves numerically in one dimension under steady-state conditions, the Poisson and continuity equations self-consistently. The influence of constructive characteristics and different levels of hazardous environmental work conditions on the maximum power point of over 150 devices has been investigated. The study has allowed the authors to propose a useful analytical model related to the constructive characteristics of the device such as polarity, base resistivity and total thickness, with the aim of examining the electrical performance of Si space solar cells. Results presented in this paper are important in order to contribute to the design of radiation-hardened devices.

URLhttps://doi.org/10.1088%2F0268-1242%2F28%2F4%2F045010
DOI10.1088/0268-1242/28/4/045010
Research Line: 
Control de sistemas de conversión de energías renovables
Control of renewable energy systems